PART |
Description |
Maker |
BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管,耗尽 N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode From old datasheet system
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Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. Vishay Telefunken VISAY[Vishay Siliconix]
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VIT2080C-E3 VIT2080C-M3-4W VIT2080CHM3-4W |
Dual Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
VFT30L60C-E3-4W |
Dual Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
V20WM100C-M3 |
Dual Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
VT4060C-E3-15 |
Dual Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
VFT6045C |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
VT1060C VIT1060C |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
|
Vishay
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V40100GHM3-4W VI40100G-M3-4W VI40100GHM3-4W V40100 |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
V10150CHM3-4W V10150C-M3-4W VI10150CHM3-4W VI10150 |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
V10170C-M3 |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
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